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TIP3055 NPN SILICON POWER TRANSISTOR
Copyright (c) 1997, Power Innovations Limited, UK DECEMBER 1970 - REVISED MARCH 1997
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Designed for Complementary Use with the TIP2955 Series 90 W at 25C Case Temperature
B
SOT-93 PACKAGE (TOP VIEW) 1
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15 A Continuous Collector Current Customer-Specified Selections Available
C
2
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) (see Note 1) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. SYMBOL VCBO VCER V EBO IC IB Ptot Ptot 1/2LIC 2 Tj Tstg TL VALUE 100 70 7 15 7 90 3.5 62.5 -65 to +150 -65 to +150 260 UNIT V V V A A W W mJ C C C
This value applies when the base-emitter resistance RBE = 100 . Derate linearly to 150C case temperature at the rate of 0.72 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 10 V.
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INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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TIP3055 NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
electrical characteristics at 25C case temperature
PARAMETER V (BR)CEO ICER ICEO ICEV IEBO hFE VCE(sat) VBE hfe Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Voltage between base and emitter Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IC = 30 mA VCE = 70 V VCE = 30 V VCE = 100 V VEB = VCE = V CE = IB = IB = VCE = 7V 4V 4V 0.4 A 3.3 A 4V TEST CONDITIONS IB = 0 RBE = 100 IB = 0 VBE = -1.5 V IC = 0 IC = IC = IC = IC = IC = IC = IC = 4A 10 A 4A 10 A 4A 0.5 A 0.5 A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 15 3 20 5 1.1 3 1.8 V V (see Note 5) MIN 60 1 0.7 5 5 70 TYP MAX UNIT V mA mA mA mA
VCE = 10 V VCE = 10 V
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NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.39 35.7 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 6 A V BE(off) = -4 V IB(on) = 0.6 A RL = 5
MIN IB(off) = -0.6 A tp = 20 s, dc 2%
TYP 0.6 1
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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INFORMATION
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TIP3055 NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
1000 VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% hFE - DC Current Gain
TCS637AD
100
10 0*01
0*1
1*0
10
IC - Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS637AB
IC - Collector Current - A
10
tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation
1*0
0*1 1*0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 2.
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INFORMATION
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TIP3055 NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
100 Ptot - Maximum Power Dissipation - W
TIS637AB
80
60
40
20
0 0 25 50 75 100 125 150 TC - Case Temperature - C
Figure 3.
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INFORMATION
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TIP3055 NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
MECHANICAL DATA SOT-93 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SOT-93 4,90 4,70
o
4,1 4,0
15,2 14,7
3,95 4,15
1,37 1,17
16,2 MAX. 12,2 MAX.
31,0 TYP.
18,0 TYP.
1 1,30 1,10
2
3 0,78 0,50 11,1 10,8 2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW
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INFORMATION
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TIP3055 NPN SILICON POWER TRANSISTOR
DECEMBER 1970 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
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